n1313 tkim/o1012 tkim/41301 tsim/91098 ha (kt)/8258mo/4017 ki/2173 ki, ts no.694-1/4 http://onsemi.com semiconductor components industries, llc, 2013 november, 2013 2sb815/2sd1048 bipolar transistor (?) 15v, (?) 0.7a, low v ce ( sat ) , ( pnp ) npn single cp stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? ultrasmall package allows miniaturization in end products ? large current capacity (i c =0.7a) and low-saturation voltage speci cations ( ): 2sb815 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector to base voltage v cbo (--)20 v collector to emitter voltage v ceo (--)15 v emitter to base voltage v ebo (--)5 v collector current i c (--)0.7 a collector current (pulse) i cp (--)1.5 a collector dissipation p c 200 mw junction temperature tj 125 c storage temperature tstg --55 to +125 c package dimensions unit : mm (typ) 7013a-009 ordering number : en694h product & package information ? package : cp ? jeita, jedec : sc-59, to-236, sot-23, to-236ab ? minimum packing quantity : 3,000 pcs./reel packing type: tb marking electrical connection 1 : base 2 : emitter 3 : collector cp 12 3 1.5 2.5 1.1 0.3 0.05 2.9 0.95 0.4 0.1 0.5 0.5 tb xC lot no. r a n k lot no. b? lot no. r a n k lot no. 2sd1048 2sb815 2sb815-6-tb-e 2SB815-7-tb-e 2sd1048-6-tb-e 2sd1048-7-tb-e 3 2 1 2sd1048 3 2 1 2sb815
2sb815 / 2sd1048 no.694-2/4 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)15v, i e =0a (--)0.1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 a dc current gain h fe 1v ce =(--)2v, i c =(--)50ma 200* 600* h fe 2v ce =(--)2v, i c =(--)500ma 80 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 250 mhz output capacitance cob v cb =(--)10v, f=1mhz (13)8 pf collector to emitter saturation voltage v ce (sat)1 i c =(--)5ma, i b =(--)0.5ma (--15)10 (--35)25 mv v ce (sat)2 i c =(--)100ma, i b =(--)10ma (--60)30 (--120)80 mv * : the 2sb815/2sd1048 are classi ed by 50ma h fe as follows : rank 6 7 h fe 200 to 400 300 to 600 ordering information device package shipping memo 2sb815-6-tb-e cp 3,000pcs./reel pb free 2SB815-7-tb-e cp 3,000pcs./reel 2sd1048-6-tb-e cp 3,000pcs./reel 2sd1048-7-tb-e cp 3,000pcs./reel
2sb815 / 2sd1048 no.694-3/4 100 10 23 5 1.0 23 5 1000 23 5 23 5 10 23 5 1.0 23 57 57 0 --100 --200 --300 --400 --500 --600 --700 --800 0 --0.1 --0.2 --0.3 --0.4 --0.5 i b =0ma itr08396 itr08397 itr08400 itr08401 itr08399 1.0 2 3 5 7 10 2 3 5 --50ma --30ma --10ma --2ma --1ma --6ma 0 100 200 300 400 500 600 700 800 0 0.1 0.2 0.3 0.4 0.5 i b =0ma 10ma 50ma 1ma 2ma 4ma 6ma 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1.0 base to emitter voltage, v be -- v base current, i b -- a i b -- v be itr08398 10 100 2 3 5 7 1000 2 3 5 7 10 1.0 23 57 100 23 57 10 100 2 3 5 7 1000 2 3 5 7 (for pnp, minus sign is omitted.) 2sb815 2sb815 2sd1048 2sd1048 2sb815 2sd1048 2sb815 2sd1048 2sb815 2sd1048 v ce =5v v ce =10v v ce =2v f=1mhz (for pnp, minus sign is omitted.) (for pnp, minus sign is omitted.) (for pnp, minus sign is omitted.) collector to emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce collector to emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- mhz collector to base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf collector current, i c -- ma h fe -- i c dc current gain, h fe 100 10 23 5 1.0 23 5 1000 23 5 1000 2 3 5 100 10000 2 3 5 2 3 5 10 5 itr08402 i c / i b =10 itr08403 0 20 40 60 80 100 120 140 0 150 100 200 250 300 50 2sb815 2sd1048 (for pnp, minus sign is omitted.) ambient temperature, ta -- c p c -- ta collector dissipation, p c -- mw collector current, i c -- ma v ce (sat) -- i c collector to emitter saturation voltage, v ce (sat) -- mv
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